TC650DEMO【PDF 3/16 页】DEMO BOARD FOR TC650/651 1"X1"

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TC650/TC651

1.0

ELECTRICAL

CHARACTERISTICS

? Notice: Stresses above those listed under "Absolute Maxi-

mum Ratings" may cause permanent damage to the device.

These are stress ratings only and functional operation of the

device at these or any other conditions above those indicated

Absolute Maximum Ratings?

Input Voltage (V DD to GND) ................................... +6V

in the operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

Output Voltage (OUT to GND) ................................. 6V

Voltage On Any Pin ....... (GND – 0.3V) to (V DD + 0.3V)

Operating Temperature Range ......... –40 ° C to +125 ° C

Storage Temperature ........................ –65 ° C to +150 ° C

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, V DD = 2.8V to 5.5V, SHDN = V DD , T A = –40 ° C to +125 ° C.

Parameters

Supply Voltage

Supply Current

Sym

V DD

I DD

Min

2.8

—

Typ

—

50

Max

5.5

90

Units

V

μA

Conditions

PWM, T OVER are open

SHDN Input

SHDN Input High Threshold

SHDN Input Low Threshold

V IH

V IL

65

—

—

—

—

15

%V DD

%V DD

PWM Output

PWM Output Low Voltage

PWM Output High Voltage

PWM Rise Time

V OL

V OH

t R

—

V DD – 0.5

—

—

—

10

0.3

—

—

V

V

μs

I SINK = 1 mA

I SOURCE = 5 mA

I OH = 5 mA, 1 nF from

PWM to GND

PWM Fall Time

t F

—

10

—

μs

I OL = 1 mA, 1 nF from

PWM to GND

PWM Frequency

f OUT

10

15

—

Hz

Start-up Time

t STARTUP

—

32/f OUT

—

sec

V DD Rises from GND

or SHDN Released

Temperature Accuracy

High Temperature Accuracy

T H ACC

T H – 3

T H

T H + 3

°C

Temperature Range Accuracy (T H – T L ) ACC

–1.0

–2.5

—

—

+1.0

+2.5

°C

°C

(T H – T L ) ≤ 20 ° C

(T H – T L ) ≥ 20 ° C

Auto-shutdown Hysteresis

T HYST

—

(T H -T L )/5

—

°C

TC651 Only

T OVER Output

T OVER Output High Voltage

T OVER Output Low Voltage

Absolute Accuracy

Trip Point Hysteresis

V HIGH

V LOW

T OVER ACC

T OVER HYST

V DD – 0.5

—

—

—

—

—

T H + 10

5

—

0.4

—

—

V

V

°C

°C

I SOURCE = 1.2 mA

I SINK = 2.5 mA

At Trip Point

Note 1:

Transition from 90% to 100% Duty Cycle.

? 2004 Microchip Technology Inc.

DS21450C-page 3

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